msa-0836 cascadable silicon bipolar mmic amplifier data sheet features usable gain to 6.0 ghz high gain: 32.5 db typical at 0.1 ghz 23.0 db typical at 1.0 ghz low noise figure: 3.0 db typical at 1.0 ghz cost effective ceramic microstrip package description the msa-0836 is a high performance silicon bipolar monolithic microwave integrated circuit (mmic) housed in a cost effective, microstrip package. this mmic is designed for use as a general purpose 50 ? gain block above 0.5 ghz and can be used as a high gain transistor below this frequency. typical applications include narrow and moderate band if and rf amplifiers in commercial and industrial applications. the msa-series is fabricated using avago s 10 ghz f t , 25 ghz f max , silicon bipolar mmic process which uses nitride self-alignment, ion implantation, and gold met- allization to achieve excellent performance, unifor- mity and reliability. the use of an external bias resistor for temperature and current stability also allows bias flexibility. typical biasing configuration c block c block r bias v cc > 10 v v d = 7.8 v rfc (optional) in out msa 4 1 2 3 36 micro-x package
2 msa-0836 absolute maximum ratings parameter absolute maximum [1] device current 80 ma power dissipation [2,3] 750 mw rf input power +13 dbm junction temperature 150 c storage temperature [4] C 65 c to 150 c thermal resistance [2,5] : jc = 175 c/w notes: 1. permanent damage may occur if any of these limits are exceeded. 2. t case = 25 c. 3. derate at 5.7 mw/ c for t c > 69 c. 4. storage above +150 c may tarnish the leads of this package making it difficult to solder into a circuit. 5. the small spot size of this technique results in a higher, though more accurate determination of jc than do alternate methods. g p power gain (|s 21 | 2 ) f = 0.1 ghz db 32.5 f = 1.0 ghz 22.0 23.0 25.0 f = 4.0 ghz 10.5 input vswr f = 1.0 to 3.0 ghz 2.0:1 output vswr f = 1.0 to 3.0 ghz 1.5:1 nf 50 ? noise figure f = 1.0 ghz db 3.0 p 1 db output power at 1 db gain compression f = 1.0 ghz dbm 12.5 ip 3 third order intercept point f = 1.0 ghz dbm 27.0 t d group delay f = 1.0 ghz psec 125 v d device voltage v 7.0 7.8 8.4 dv/dt device voltage temperature coefficient mv/ c C 17.0 note: 1. the recommended operating current range for this device is 20 to 40 ma. typical performance as a function of current is on the following page. electrical specifications [1] , t a = 25 c symbol parameters and test conditions: i d = 36 ma, z o = 50 ? units min. typ. max. vswr ordering information part numbers no. of devices comments msa-0836-blkg 100 bulk MSA-0836-TR1G 1000 7" reel
3 msa-0836 typical scattering parameters [1] (z o = 50 ? , t a = 25 c, i d = 36 ma) freq. ghz mag ang db mag ang db mag ang mag ang k 0.1 .63 C 17 32.5 42.02 161 C 37.7 .013 55 .63 C 19 0.72 0.2 .58 C 33 31.5 37.52 145 C 33.7 .021 47 .56 C 37 0.73 0.4 .49 C 56 29.1 28.50 119 C 29.7 .033 54 .42 C 66 0.72 0.6 .40 C 70 26.7 21.54 103 C 27.9 .040 55 .32 C 84 0.78 0.8 .35 C 80 24.6 17.01 92 C 26.0 .050 53 .24 C 98 0.85 1.0 .33 C 89 22.9 13.98 82 C 24.9 .057 52 .18 C 107 0.89 1.5 .30 C 111 19.5 9.45 64 C 22.1 .079 51 .09 C 126 0.95 2.0 .30 C 133 16.9 7.03 48 C 20.2 .098 44 .07 C 141 0.99 2.5 .32 C 150 14.9 5.53 39 C 19.2 .110 42 .06 C 166 1.04 3.0 .34 C 170 13.2 4.56 26 C 18.3 .122 36 .06 C 106 1.06 3.5 .38 175 11.7 3.86 14 C 17.5 .133 32 .08 C 100 1.08 4.0 .39 162 10.5 3.33 2 C 16.7 .146 27 .12 C 101 1.08 5.0 .41 132 7.9 2.47 C 21 C 15.6 .165 19 .21 C 113 1.10 6.0 .52 95 5.8 1.94 C 45 C 14.6 .187 7 .20 C 149 1.05 s 11 s 21 s 12 s 22 typical performance, t a = 25 c (unless otherwise noted) g p (db) 0.1 0.3 0.5 1.0 3.0 6.0 frequency (ghz) figure 1. typical power gain vs. frequency, i d = 36 ma. 2 046810 v d (v) figure 2. device current vs. voltage. figure 3. power gain vs. current. 0 5 10 15 20 25 30 35 0 35 gain flat to dc i d (ma) t c = +125 c t c = +25 c t c = ?5 c figure 4. output power at 1 db gain compression, nf and power gain vs. case temperature, f = 1.0 ghz, i d =36ma. frequency (ghz) figure 5. output power at 1 db gain compression vs. frequency. frequency (ghz) figure 6. noise figure vs. frequency. 10 20 30 i d (ma) 5 10 15 20 25 30 35 g p (db) 10 30 40 20 0.1 ghz 4.0 ghz 2.0 ghz 0.5 ghz 1.0 ghz 2 3 4 10 11 12 13 21 22 23 24 ?5 ?5 +25 +85 +125 p 1 db (dbm) nf (db) gp (db) temperature ( c) p 1 db nf g p 3.0 2.5 3.5 4.0 4.5 nf (db) 0.1 0.2 0.3 0.5 2.0 1.0 4.0 0.1 0.2 0.3 0.5 2.0 1.0 4 6 8 10 16 14 12 p 1 db (dbm) i d = 36 ma i d = 40 ma i d = 20 ma i d = 20 ma i d = 36 ma i d = 40 ma
36 micro-x package dimensions 1 3 4 2 source source drain gate 2.15 (0.085) 2.11 (0.083) dia. 0.508 (0.020) 2.54 (0.100) 4.57 0.25 0.180 0.010 0.15 0.05 (0.006 0.002) notes: 1. dimensions are in millimeters (inches) 2. tolerances: in .xxx = 0.005 mm .xx = 0.13 0.56 (0.022) 1.45 0.25 (0.057 0.010) for product information and a complete list of distributors, please go to our web site: www.avagotech.com avago, avago technologies, and the a logo are trademarks of avago technologies, limited in the united states and other countrie s. data subject to change. copyright ? 2007 avago technologies, limited. all rights reserved. obsoletes 5989-2742en av02-0306en - april 12, 2007
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